Green Product
STM6966
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRO...
Green Product
STM6966
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
60V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
ID
4.5A
R DS(ON) (m Ω) Max
80 @ VGS=10V 110 @ VGS=4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TA=25°C TA=70°C 4.5 3.6 22.5 30 TA=25°C TA=70°C 2.5 1.6 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
50
°C/W
Details are subject to change without notice.
Oct,14,2009
1
www.samhop.com.tw
STM6966
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=48V , VGS=0V
Min 60
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
1 ±10
uA uA
VDS=VGS , ID=250uA VGS=10V , ID=4.5A VGS=4.5V , ID=3.7A VDS=5V , ID=4.5A
1
1.8 63 85 8
3 80 110
V m ohm m o...