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STM6922 Dataheets PDF



Part Number STM6922
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel MOSFET
Datasheet STM6922 DatasheetSTM6922 Datasheet (PDF)

Green Product S T M6922 Jan.22 ,2007 S amHop Microelectronics C orp. Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m ıΩ ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 26 @ V G S = 10V 33 @ V G S = 4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S o.

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Green Product S T M6922 Jan.22 ,2007 S amHop Microelectronics C orp. Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S ( m ıΩ ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 26 @ V G S = 10V 33 @ V G S = 4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID Limit 40 20 7 5.9 28 1.7 2 1.44 -55 to 150 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 62.5 C /W S T M6922 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 40 1 10 1 1.8 19 27 15 14 696 123 74 13.5 13 45 8 13.3 7 2.2 3.9 3 V uA uA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 26 m ohm 33 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =20 V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID =6A,V GS =10V V DS =20V, ID =6A,V GS =4.5V V DS =20V, ID = 6 A V GS =4.5V 2 ns ns ns ns nC nC nC nC S T M6922 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =1.7A Min Typ Max Unit 0.78 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 30 VG S =10V VG S =5V 24 15 12 VG S =4V ID , Drain C urrent(A) VG S =4.5V 18 I D , Drain C urrent (A) T j=125 C 9 -55 C 6 12 VG S =3.5V 6 0 0 0.5 1.0 1.5 2.0 3 0 0.0 25 C 2.5 3.0 0.9 1.8 2.7 3.6 4.5 5.4 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 60 1.75 R DS (ON) , On-R es is tance Normalized 50 1.60 1.45 1.30 1.15 1.00 0.85 V G S =4.5V I D =5A V G S =10V I D =6A R DS (on) (m Ω) 40 30 20 V G S =10V 10 1 V G S =4.5V 1 6 12 18 24 30 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S T M6922 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 90 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 I D =6A Is , S ource-drain current (A) 75 10.0 5.0 25 C 125 C R DS (on) (m Ω) 60 45 75 C 30 15 0 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0 0.25 0.50 0.75 1.00 1.25 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M6922 V G S , G ate to S ource V oltage (V ) 1200 1000 10 8 6 4 2 0 V DS =20V I D =6A C , C apacitance (pF ) 800 600 400 200 0 0 C rs s 5 10 15 C is s 5 C oss 20 25 30 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 250 Tr 50 30 10 RD ON S( )L im it 10 ms S witching T ime (ns ) 100 60 10 TD(off) TD(on) Tf I D , Drain C urrent (A) 10 1s DC 0m s 1 V D S =20V ,ID=1A 0.1 0.03 1 1 V G S =10V V G S =10V S ingle P ulse T A =25 C 0.1 1 10 40 6 10 60 100 300 600 R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 9 Thermal Resistance 1 0.5 0.2 0.


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