Document
Green Product
S T M6922
Jan.22 ,2007
S amHop Microelectronics C orp.
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S
( m ıΩ ) Max
ID
7A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
26 @ V G S = 10V 33 @ V G S = 4.5V
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID
Limit 40 20 7 5.9 28 1.7 2 1.44 -55 to 150
Unit V V A A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
R JA
62.5
C /W
S T M6922
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A
Min Typ C Max Unit
40 1 10 1 1.8 19 27 15 14 696 123 74 13.5 13 45 8 13.3 7 2.2 3.9 3 V uA uA V
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 26 m ohm 33 m ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
C IS S C OS S CRSS
c
V DS =20 V, V GS = 0V f =1.0MH Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Q gs Q gd
V DD = 20V ID = 1 A V GS = 10V R GE N = 3.3 ohm V DS =20V, ID =6A,V GS =10V V DS =20V, ID =6A,V GS =4.5V V DS =20V, ID = 6 A V GS =4.5V
2
ns ns ns ns nC nC nC nC
S T M6922
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is =1.7A
Min Typ Max Unit
0.78 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
30 VG S =10V VG S =5V 24 15 12 VG S =4V
ID , Drain C urrent(A)
VG S =4.5V 18
I D , Drain C urrent (A)
T j=125 C 9 -55 C 6
12 VG S =3.5V 6 0 0 0.5 1.0 1.5 2.0
3 0 0.0
25 C
2.5
3.0
0.9
1.8
2.7
3.6
4.5
5.4
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
60
1.75
R DS (ON) , On-R es is tance Normalized
50
1.60 1.45 1.30 1.15 1.00 0.85
V G S =4.5V I D =5A V G S =10V I D =6A
R DS (on) (m Ω)
40 30 20 V G S =10V 10 1 V G S =4.5V
1
6
12
18
24
30
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T M6922
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
90
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
I D =6A
Is , S ource-drain current (A)
75
10.0 5.0
25 C 125 C
R DS (on) (m Ω)
60 45 75 C 30 15 0 25 C 125 C
75 C
0
2
4
6
8
10
1.0
0
0.25
0.50
0.75
1.00
1.25
V G S , G ate-S ource Voltage (V )
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M6922
V G S , G ate to S ource V oltage (V )
1200 1000
10 8 6 4 2 0 V DS =20V I D =6A
C , C apacitance (pF )
800 600 400 200 0 0 C rs s 5 10 15
C is s
5
C oss 20 25 30
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
250
Tr
50 30 10
RD ON S( )L im it
10 ms
S witching T ime (ns )
100 60 10
TD(off)
TD(on) Tf
I D , Drain C urrent (A)
10
1s
DC
0m
s
1
V D S =20V ,ID=1A
0.1 0.03
1 1
V G S =10V
V G S =10V S ingle P ulse T A =25 C 0.1 1 10 40
6 10
60 100 300 600
R g, G ate R es is tance ( Ω)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe O perating Area
9
Thermal Resistance
1
0.5
0.2
0.