STM9930A

S T M9930A S amHop Microelectronics C orp. Dec.20, 2005 2N and 2P Channel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 6A R DS (ON) ( m W ) Max ID -5.3A R DS (ON) ( m W ) Max 35 @ V G S = 10V 54 @ V G S = 4.5V P1S 53 @ V G S = -10V 75 @ V G S = -4.5V P2S P2G P2G N2D/P2D P1S/P2S P1G N2G N1S/N2S N1D/P1D N1G P1G P1N1D P2N2D S O-8 N1G N1S N2S N2G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG N-C hannel P-C hannel 30 20 6 4 20 1.7 2 1.44 -55 to 150 -30 20 -5.3 -3.5 -20 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M9930A N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 5A V GS =4.5V, ID= 3A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 5A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 29 42 20 8 550 130 60 2.3 7 8 15 6 13 6.6 1.4 3.8 3 35 54 V m ohm m ohm OFF CHAR...