STM2DPFS30L

® STM2DPFS30L ™ P - CHANNEL 30V - 0.145Ω - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30V SCHOTTKY IF (A V) 1A R DS(on ) <0.165 Ω V RRM 40V ID 2A V F(M AX) 0.55V MiniSO-8 DESCRIPTION: This product associates the latest low voltage St ripFET ™ in p-channel version to a low drop Schottk y diode. Such configuration is extremely versatile in implementing a large variety of DC-DC convert ers for printers, portable equipment, and cellular phones. New MiniSO-8 package features: s INTERNAL SCHEMATIC DIAGRAM s Half footprint area versus standard SO-8, for application where minimum circuit board space is necessary. Extremely low profile, ideal for low thickness equipment. MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM( ) P t ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C o o Valu e 30 30 ± 20 2 1.3 8 1.25 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symb ol V RRM I F(RMS) I F (AV) I FSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average F orward Current Surge Non Repetitive Forward Current Critical Rate Of Rise Of Reverse Voltage T a=60 C δ =0.5 tp= 10 ms Sinusoidal o Valu e 40 2 1.2 5.5 10000 Un it V A A A V/ µ s () Pulse width limited by safe operating area Note: For ...