N-Channel MOSFET
STT3402N
Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product...
Description
STT3402N
Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
A E
6 5 4
TSOP-6
L
B
TYPICAL APPLICATIONS
F DG
1
2
3
C K
H J
Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Gate Charge. Fast Switch. Miniature TSOP-6 Surface Mount Package Saves Board Space.
REF. A B C D E F
PRODUCT SUMMARY
VDS(V) 30 STT3402N RDS(on) (m 0.027@VGS= 10V 0.035@VGS= 4.5V ID(A) 6.3 5.5
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50
REF. G H J K L
Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
D D
D D S
PACKAGE INFORMATION
G
Package TSOP-6
MPQ 3K
LeaderSize 7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
2 1
Symbol VDS VGS
TA= 25°C TA= 70°C
Ratings
Maximum
Unit
V V A A A W °C
ID IDM IS
Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Rang...
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