STT3402N

STT3402N Elektronische Bauelemente 6.3 A, 30 V, RDS(ON) 27 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are power switch, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E 6 5 4 TSOP-6 L B TYPICAL APPLICATIONS  F DG 1 2 3 C K H J    Low RDS(on) Provides Higher Efficiency and Extends Battery Life. Low Gate Charge. Fast Switch. Miniature TSOP-6 Surface Mount Package Saves Board Space. REF. A B C D E F PRODUCT SUMMARY VDS(V) 30 STT3402N RDS(on) (m 0.027@VGS= 10V 0.035@VGS= 4.5V ID(A) 6.3 5.5 Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D D D S PACKAGE INFORMATION G Package TSOP-6 MPQ 3K LeaderSize 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings Maximum Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Rang...