STT3434

STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 θ b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current Power Dissipation Linear Derating Factor Thermal Resistance Junction-ambient3 Max. Operating Junction and Storage Temperature Range 1 Symbol VDS VGS VGS@ 4.5V, ID @TA=25℃ VGS@ 4.5V, ID @TA=70℃ IDM PD @TA=25℃ RθJA Tj, Tstg Ratings 30 ±12 6.1 4.9 30 1.14 0.01 110 -55 ~ +150 Unit V V A A W W/℃ ℃/W ℃ 01-June-2005 Rev. A Page 1 of 4 STT3434 Elektronische Bauelemente 6.1 A, 30 V, RDS(ON) 34 mΩ N-Channel Enhancement Mode Power Mos.FET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate Leakage Current Zero Gate Voltage Drain Current (Tj=25℃) Zero Gate Voltage Drain Current (Tj=75℃) Symb...