STT3457P

STT3457P Elektronische Bauelemente -4 A, -30 V, RDS(ON) 60 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F A E 6 5 4 TSOP-6 L B 1 2 3 FEATURES  C K H J    Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TSOP-6 saves board space. Fast switching speed High performance trench technology DG REF. A B C D E F PACKAGE INFORMATION Package TSOP-6 MPQ 3K LeaderSize 7’ inch Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. D D D D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2 1 Symbol VDS VGS TA= 25°C TA= 70°C Ratings -30 ±20 -4 -3.2 -20 -1.7 2 1.3 -55 ~ 150 62.5 110 Unit V V A A A W °C ID IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA= 25°C TA= 70°C PD Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 ...