P-Channel MOSFET
STT3463P
Elektronische Bauelemente -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET
RoHS Compliant Product...
Description
STT3463P
Elektronische Bauelemente -3 A, -60 V, RDS(ON) 155 m P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
A E
6 5 4
TSOP-6
L
FEATURES
B
Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications.
F DG
1
2
3
C K
H J
REF. A B C D E F
APPLICATION
PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
D
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50
REF. G H J K L
Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
D
PACKAGE INFORMATION
Package TSOP-6 MPQ 3K Leader Size 7’ inch
D D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 Operating Junction and Storage Temperature Range
1
Symbol VDS VGS
TA= 25°C TA= 70°C
Ratings -60 ±20 -3.0 -2.4 -15 -1.7 2.0 1.3 -55 ~ 15...
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