S T M6968
S amHop Microelectronics C orp. Nov 12.2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R OD...
S T M6968
S amHop Microelectronics C orp. Nov 12.2006
Dual N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
60V
F E AT UR E S
( m Ω ) Max
ID
5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
60 @ V G S = 10V 70 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C ID
Limit 60 20 5 4.3 25 1.7 2 1.44
Unit V V A A A A
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C
W C
T J , T S TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
R JA
62.5
C /W
S T M6968
E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
c
Condition
V GS = 0V, ID = 250uA V DS = 48V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 4.5A V GS =4.5V, ID= 3A V DS = 5V, V GS = 10V V DS = 4.5V, ID = 4.5A
Min Typ C Max Unit
60 1 10 1.0 1.7 49 55 20 13 685 85 50 2 11 12 38 8 12.7 6.9 1.8 3.6 3 V uA uA V
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACT...
