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STT600 Dataheets PDF



Part Number STT600
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet STT600 DatasheetSTT600 Datasheet (PDF)

Green Product STT600 Ver 3.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 90V ID 1.4A R DS(ON) (m Ω) Max 600 @ VGS=10V 708 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SO T - 223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Vol.

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Green Product STT600 Ver 3.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 90V ID 1.4A R DS(ON) (m Ω) Max 600 @ VGS=10V 708 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SO T - 223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d ae Limit 90 ±20 TA=25°C TA=70°C 1.4 1.12 9.3 0.49 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Apr,16,2013 1 www.samhop.com.tw STT600 Ver 3.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=72V , VGS=0V 90 1 ±10 V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.7A VGS=4.5V , ID=0.65A VDS=10V , ID=0.7A 1 1.7 480 525 2.5 170 22 13 3 600 708 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.0MHz VDD=45V ID=0.7A VGS=10V RGEN= 6 ohm VDS=45V,ID=0.7A,VGS=10V VDS=45V,ID=0.7A,VGS=4.5V VDS=45V,ID=0.7A, VGS=10V 14.5 11.5 172 26 3.2 1.8 0.65 0.9 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=0.7A 0.87 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13) e.Drain current limited by maximum junction temperature. Apr,16,2013 2 www.samhop.com.tw STT600 Ver 3.0 4.0 V G S =10V 3.5 ID, Drain Current(A) V G S =4.5V V G S =4V V G S =3.5V ID, Drain Current(A) 3.2 2.8 Tj=125 C 2.1 -55 C 1.4 25 C 0.7 2.4 1.6 V G S =3V 0.8 V G S =2.5V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1200 Figure 2. Transfer Characteristics 2.0 R DS(on), On-Resistance Normalized 1000 1.8 1.6 1.4 1.2 1.0 0 0 25 V G S =10V I D =0.7A R DS(on)(m Ω) 800 V G S =4.5V 600 400 200 0 0.1 V G S =10V V G S =4.5V I D =0.65A 0.8 1.6 2.4 3.2 4 50 75 100 125 I D, Drain Current(A) 150 T j ( °C ) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Apr,16,2013 3 www.samhop.com.tw STT600 Ver 3.0 1200 20 Is, Source-drain current(A) I D =0.7A 1000 125 C 10 RDS(on)(m Ω) 800 600 400 200 0 125 C 75 C 25 C 75 C 1 25 C 0 2 4 6 8 10 0 0.6 1.2 1.8 2.4 3.0 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 240 200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) C, Capacitance(pF) Ciss 160 120 80 40 8 V DS = 45V I D = 0.7A 6 4 2 Coss Crss 0 5 10 15 20 25 30 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 TD(off) 10 I D, Drain Current(A) it 10 Switching Time(ns) L im ms N) 10 1s (O 0m Tf 1 RD s S 10 s DC 10 TD(on) Tr V DS =45V,I D =0.7A V GS =10V 1 1 10 100 0.1 VGS=10V Single Pulse TA=25 C 1 10 0.1 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Apr,16,2013 4 www.samhop.com.tw STT600 Ver 3.0 V ( BR )D S S tp L V DS RG 20V D .U .T IA S tp + - VDD 0.0 1 IAS Unclamped Inductive Waveforms F igure 13b. Unclamped Inductive Test Circuit F igure 13a. 1 0.5 Normalized Transient Thermal Resistance .


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