Document
Green Product
STT600
Ver 3.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
90V
ID
1.4A
R DS(ON) (m Ω) Max
600 @ VGS=10V 708 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
D
G G D S S
STT SERIES SO T - 223
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d ae
Limit 90 ±20 TA=25°C TA=70°C 1.4 1.12 9.3 0.49 TA=25°C TA=70°C 3 1.9 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Apr,16,2013
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STT600
Ver 3.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=72V , VGS=0V
90 1 ±10
V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=0.7A VGS=4.5V , ID=0.65A VDS=10V , ID=0.7A
1
1.7 480 525 2.5 170 22 13
3 600 708
V m ohm m ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=25V,VGS=0V f=1.0MHz
VDD=45V ID=0.7A VGS=10V RGEN= 6 ohm VDS=45V,ID=0.7A,VGS=10V VDS=45V,ID=0.7A,VGS=4.5V VDS=45V,ID=0.7A, VGS=10V
14.5 11.5 172 26 3.2 1.8 0.65 0.9
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=0.7A
0.87
1.3
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13) e.Drain current limited by maximum junction temperature.
Apr,16,2013
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STT600
Ver 3.0
4.0
V G S =10V
3.5
ID, Drain Current(A)
V G S =4.5V
V G S =4V V G S =3.5V
ID, Drain Current(A)
3.2
2.8 Tj=125 C 2.1 -55 C 1.4 25 C 0.7
2.4
1.6
V G S =3V
0.8
V G S =2.5V
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1200
Figure 2. Transfer Characteristics
2.0
R DS(on), On-Resistance Normalized
1000
1.8 1.6 1.4 1.2 1.0 0 0 25
V G S =10V I D =0.7A
R DS(on)(m Ω)
800 V G S =4.5V 600 400 200 0 0.1 V G S =10V
V G S =4.5V I D =0.65A
0.8
1.6
2.4
3.2
4
50
75
100
125
I D, Drain Current(A)
150 T j ( °C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Apr,16,2013
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STT600
Ver 3.0
1200 20
Is, Source-drain current(A)
I D =0.7A
1000
125 C 10
RDS(on)(m Ω)
800 600 400 200 0
125 C 75 C 25 C
75 C 1
25 C
0
2
4
6
8
10
0
0.6
1.2
1.8
2.4
3.0
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
240 200
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
Ciss
160 120 80 40
8
V DS = 45V I D = 0.7A
6
4
2
Coss Crss
0 5 10 15 20 25 30
0
0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
TD(off)
10
I D, Drain Current(A)
it
10
Switching Time(ns)
L im
ms
N)
10
1s
(O
0m
Tf
1
RD
s
S
10 s
DC
10
TD(on) Tr
V DS =45V,I D =0.7A V GS =10V
1 1 10 100
0.1
VGS=10V Single Pulse TA=25 C
1 10
0.1
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Apr,16,2013
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STT600
Ver 3.0
V ( BR )D S S
tp
L
V DS
RG
20V
D .U .T
IA S
tp
+ -
VDD
0.0 1
IAS
Unclamped Inductive Waveforms F igure 13b.
Unclamped Inductive Test Circuit F igure 13a.
1
0.5
Normalized Transient Thermal Resistance
.