STT100

Green Product STT100 Ver 3.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 1.2A R DS(ON) (m Ω) Max 819 @ VGS=10V 956 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D G G S STT SERIES SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c TA=25°C TA=70°C Limit 100 ±20 1.2 1.0 8 2.25 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TA=25°C TA=70°C 3 1.9 -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 42 °C/W Details are subject to change without notice. Oct,18,2012 1 www.samhop.com.tw STT100 Ver 3.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 100 1 ±10 V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=0.6A VGS=4.5V , ID=0.56A VDS=10V , ID=0.6A 1 2 655 708 1.9 155 20 12 3 819 956 V m ohm m ohm...