STT6601

STT6601 Elektronische Bauelemente (N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed. FEATURES z APPLICATIONS z z z z z z z z N-Channel 30V/2.8A, RDS(ON) = 68mΩ@VGS = 10 V 30V/2.3A, RDS(ON) = 78mΩ@VGS = 4.5 V 30V/1.5A, RDS(ON) = 108mΩ@VGS = 2.5 V P-Channel -30V/-2.8A, RDS(ON) = 105mΩ@VGS = 10 V -30V/-2.5A, RDS(ON) = 120mΩ@VGS = 4.5 V -30V/-1.5A, RDS(ON) = 150mΩ@VGS = 2.5 V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design Battery powered systems Portable devices Power management in NB DC to DC converter, load switch, DSC, LCD display inverter PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref Week c...