STT6602

STT6602 Elektronische Bauelemente N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6602 uses advanced trench technology to provide excellent on-resistance and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. The TSOP-6 package is universally used for all commercial-industrial surface mount applications. A E TSOP-6 L 6 5 4 B FEATURES Low Gate Change Low On-resistance 1 2 3 F DG K C H J MARKING REF. 6602 Date Code A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 2 Symbol VDS VGS TA=25° C TA=70° C ID IDM PD N-Channel Unit P-Channel 30 ±20 3.3 2.6 10 1.14 0.01 -30 ±20 -2.3 -1.8 -10 V V A A W W/° C ° C Power Dissipation @TA=25° C Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA 110 ° C/W Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper...