STT6603

STT6603 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-223 package. ID -2.5A R DS(ON) (m Ω) Max 180 @ VGS=-10V 240 @ VGS=-4.5V D G S G SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -2.5 -2.0 -20 a Units V V A A A W W °C 2.08 1.33 -55 to 150 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 60 °C/W Details are subject to change without notice. Nov,17,2008 1 www.samhop.com.tw STT6603 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V -1 ±100 uA nA VDS=VGS , ID=-250uA VGS=-10V , ID=-2.5A VGS=-4.5V , ID=-2.2A VDS=-10V , ID=-2.5A -1.0 -2.0 90 120 6.4 -3 180 240 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC DYNAMIC CHARACTERISTICS In...