N-Channel MOSFET
STT6802
Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A...
Description
STT6802
Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
STT6802 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TSOP-6 package is universally used for all commercial-industrial applications.
A E
TSOP-6
L
6 5 4
B
FEATURES
1 2 3
Simple Drive Requirement Smaller Outline Package Surface mount package
F DG K
C
H J
MARKING
6802
Date Code
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50
REF. G H J K L
Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
PACKAGE INFORMATION
Package TSOP-6 MPQ 3K Leader Size 7 inch
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG
1 3
Symbol
VDS VGS TA=25° C TA=70° C ID IDM TA=25° C PD
Ratings
30 ±20 3.3
Unit
V V A
2.6 10 1.14 0.01 -55~150 A W W/° C ° C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RθJA
110
° C/W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
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STT6802
Elektronische Bauelemente 3.3A , 30V , RDS(ON) 65 mΩ N-Channel Enhancement Mode MOSFET
E...
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