Document
STT60GKxxB
Thyristor-Thyristor Modules
Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800
Tolerance:+0.5mm Dimensions in mm (1mm=0.0394")
STT60GK08B STT60GK12B STT60GK14B STT60GK16B STT60GK18B
Symbol ITRMS, IFRMS T VJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine ITSM, IFSM
o T VJ=45 C VR=0 T VJ=TVJM VR=0 o T VJ=45 C VR=0 T VJ=TVJM VR=0
Test Conditions
Maximum Ratings 94 60
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=150A non repetitive, IT=ITAVM
1500 1600 1350 1450 11200 10750 9100 8830 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125
A
i dt
2
A2s
(di/dt)cr
T VJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us
A/us
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md
T VJ=TVJM; VDR=2/3VDRM R GK= ; method 1 (linear voltage rise) T VJ=TVJM IT=ITAVM tp=30us tp=300us
V/us W W V
o
C
50/60Hz, RMS _ I ISOL<1mA
t=1min t=1s
3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 110
V~ Nm/lb.in. g
Mounting torque (M5) Terminal connection torque (M5)
Weight Typ.
STT60GKxxB
Thyristor-Thyristor Modules
Symbol VTM VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=3A/us typ.
o
Test Conditions ITM=180A; TVJ=25 C For power-loss calculations only (TVJ=125 C) VD=6V; VD=6V; TVJ=TVJM; TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM
o o o
Characteristic Values 5 1.65 0.85 3.7 1.5 max 1.6 max 100 200 0.2 10 450 200 2 150 100 24 0.45 0.225 0.65 0.325 12.7 9.6 50
Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
FEATURES
* International standard package * Copper base plate * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant
APPLICATIONS
* DC motor control * Softstart AC motor controller * Light, heat and temperature control
ADVANTAGES
* Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits
STT60GKxxB
Thyristor-Thyristor Modules
100 W 75
60 30
.1/2 .1/2
STT60B STD60B
90
120
rec. sin. 180 180
100 W 75
1.2 1.4
1
0.8
0.6 0.5
Rth(j-a)
cont.
1.7 2
50
rec. 15
50
2.5 3 3.5 4 5 6 8 K/W
25 PTAV 0 0 ITAV 25 50 A 75
25 PTAV 0
0
Ta
50
100
O
C
150
Fig.1L Power dissipation per thyristor vs. on-state current
Fig.1R Power dissipation per thyristor vs. ambient temp
200 W 150
.1 .1
200 STT60B STD60B W 150
0.3 0.4 0.5 0.6 0.7 0.8 1 1.2 1.5
0.2
0.1
Rth(c-a)
65
Tc
75 85 95 105
O
100
100
50 Pvtot 0 0 IRMS 50 100 A 150
50 Pvtot 0
2 3 4 K/W
115 125 150
C
0
Ta
50
100
O
C
Fig.2L Power dissipation per module vs. rms current
Fig.2R Power dissipation per module vs. case temp
400 W 300
.2 .2
400 STT60B STD60B
R L
W 300
0.15 0.2 0.25 0.3 0.4
0.1
0.05
Rth(c-a)
Tc
65 75 85 95 105
200
200
0.5 0.6 0.7 0.8
100 Pvtot 0 0 ID 25 50 75 100 Fig.3L Power dissipation of two modules vs. direct current 125 A 150
100 Pvtot 0
1.2 2
1 1.5
115
O
K/W
0
Ta
50
100
O
C
150
125
C
Fig.3R Power dissipation of two modules vs. case temp
STT60GKxxB
Thyristor-Thyristor Modules
600 W 500 400 300 200 100 Pvtot 0 0 ID IRMS 50
.3 .3
600
STT60B STD60B
W 500
0.1 0.08 0.06 0.04 0.12 0.15
Rth(c-a)
61 72 82 93
Tc
w3
B6
400 300 200 100
Pvtot
0.2 0.25 0.3 0.4 0.5 0.6 0.8 1 1.5
104 114
O
K/W
C
0
100
150
A
200
0
Ta
50
100
O
C
125 150
Fig.4L Power dissipation of three modules vs. direct and rms current
Fig.4R Power dissipation of three modules vs. case temp
1000 uC
.1/2 .1/2
STT60B STD60B
ITM= 100A
50A 20A 10A 5A
K/W 0.8
.1/2
1/2
. STT60B
STD60B
Zth(j-s)
Zth(j-c)
100
0.4
Tvj=125 C
o
Zth 0 0.001 t 0.01 0.1 1 10 s 100
10
0
10
A/us 100
Fig.5 Recovered charge vs. current decrease
Fig.6 Transient thermal impedance vs. time
250 A
200
.1/2
.1/2
STT60B STD60B
typ.
max.
2 IT(OV) ITSM 1.6 1.4 1.2
.1/2
1/2
. STT60B
STD60B
ITSM(25 C) =1500A ITSM(125 C)=1250A
O O
150
0 VRRM 0.5 VRRM
RRM
100
1 0.8
_
. . 1.V
50 IT
0 0
Vt 0.5 1
Tvj=25 OC O - - Tvj=125 C 2 V2.5
0.6 0.4 1 t 10 100 ms 1000
1.5
Fig.7 On-state charactristics
Fig.8 Surge overload current vs. time
.