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STT60GK18B Dataheets PDF



Part Number STT60GK18B
Manufacturers Sirectifier
Logo Sirectifier
Description Thyristor-Thyristor Modules
Datasheet STT60GK18B DatasheetSTT60GK18B Datasheet (PDF)

STT60GKxxB Thyristor-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm Dimensions in mm (1mm=0.0394") STT60GK08B STT60GK12B STT60GK14B STT60GK16B STT60GK18B Symbol ITRMS, IFRMS T VJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine ITSM, IFSM o T VJ=45 C VR=0 T VJ=TVJM VR=0 o T VJ=45 C VR=0 T VJ=TVJM VR=0 Test Conditions Maximum Ratings 94 60 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz).

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STT60GKxxB Thyristor-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm Dimensions in mm (1mm=0.0394") STT60GK08B STT60GK12B STT60GK14B STT60GK16B STT60GK18B Symbol ITRMS, IFRMS T VJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine ITSM, IFSM o T VJ=45 C VR=0 T VJ=TVJM VR=0 o T VJ=45 C VR=0 T VJ=TVJM VR=0 Test Conditions Maximum Ratings 94 60 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=150A non repetitive, IT=ITAVM 1500 1600 1350 1450 11200 10750 9100 8830 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A i dt 2 A2s (di/dt)cr T VJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md T VJ=TVJM; VDR=2/3VDRM R GK= ; method 1 (linear voltage rise) T VJ=TVJM IT=ITAVM tp=30us tp=300us V/us W W V o C 50/60Hz, RMS _ I ISOL<1mA t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 110 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M5) Weight Typ. STT60GKxxB Thyristor-Thyristor Modules Symbol VTM VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25oC; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=3A/us typ. o Test Conditions ITM=180A; TVJ=25 C For power-loss calculations only (TVJ=125 C) VD=6V; VD=6V; TVJ=TVJM; TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM o o o Characteristic Values 5 1.65 0.85 3.7 1.5 max 1.6 max 100 200 0.2 10 450 200 2 150 100 24 0.45 0.225 0.65 0.325 12.7 9.6 50 Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM FEATURES * International standard package * Copper base plate * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant APPLICATIONS * DC motor control * Softstart AC motor controller * Light, heat and temperature control ADVANTAGES * Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits STT60GKxxB Thyristor-Thyristor Modules 100 W 75 60 30 .1/2 .1/2 STT60B STD60B 90 120 rec. sin. 180 180 100 W 75 1.2 1.4 1 0.8 0.6 0.5 Rth(j-a) cont. 1.7 2 50 rec. 15 50 2.5 3 3.5 4 5 6 8 K/W 25 PTAV 0 0 ITAV 25 50 A 75 25 PTAV 0 0 Ta 50 100 O C 150 Fig.1L Power dissipation per thyristor vs. on-state current Fig.1R Power dissipation per thyristor vs. ambient temp 200 W 150 .1 .1 200 STT60B STD60B W 150 0.3 0.4 0.5 0.6 0.7 0.8 1 1.2 1.5 0.2 0.1 Rth(c-a) 65 Tc 75 85 95 105 O 100 100 50 Pvtot 0 0 IRMS 50 100 A 150 50 Pvtot 0 2 3 4 K/W 115 125 150 C 0 Ta 50 100 O C Fig.2L Power dissipation per module vs. rms current Fig.2R Power dissipation per module vs. case temp 400 W 300 .2 .2 400 STT60B STD60B R L W 300 0.15 0.2 0.25 0.3 0.4 0.1 0.05 Rth(c-a) Tc 65 75 85 95 105 200 200 0.5 0.6 0.7 0.8 100 Pvtot 0 0 ID 25 50 75 100 Fig.3L Power dissipation of two modules vs. direct current 125 A 150 100 Pvtot 0 1.2 2 1 1.5 115 O K/W 0 Ta 50 100 O C 150 125 C Fig.3R Power dissipation of two modules vs. case temp STT60GKxxB Thyristor-Thyristor Modules 600 W 500 400 300 200 100 Pvtot 0 0 ID IRMS 50 .3 .3 600 STT60B STD60B W 500 0.1 0.08 0.06 0.04 0.12 0.15 Rth(c-a) 61 72 82 93 Tc w3 B6 400 300 200 100 Pvtot 0.2 0.25 0.3 0.4 0.5 0.6 0.8 1 1.5 104 114 O K/W C 0 100 150 A 200 0 Ta 50 100 O C 125 150 Fig.4L Power dissipation of three modules vs. direct and rms current Fig.4R Power dissipation of three modules vs. case temp 1000 uC .1/2 .1/2 STT60B STD60B ITM= 100A 50A 20A 10A 5A K/W 0.8 .1/2 1/2 . STT60B STD60B Zth(j-s) Zth(j-c) 100 0.4 Tvj=125 C o Zth 0 0.001 t 0.01 0.1 1 10 s 100 10 0 10 A/us 100 Fig.5 Recovered charge vs. current decrease Fig.6 Transient thermal impedance vs. time 250 A 200 .1/2 .1/2 STT60B STD60B typ. max. 2 IT(OV) ITSM 1.6 1.4 1.2 .1/2 1/2 . STT60B STD60B ITSM(25 C) =1500A ITSM(125 C)=1250A O O 150 0 VRRM 0.5 VRRM RRM 100 1 0.8 _ . . 1.V 50 IT 0 0 Vt 0.5 1 Tvj=25 OC O - - Tvj=125 C 2 V2.5 0.6 0.4 1 t 10 100 ms 1000 1.5 Fig.7 On-state charactristics Fig.8 Surge overload current vs. time .


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