Gre r Pro
STT3414
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transi...
Gre r Pro
STT3414
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
33 @ VGS=10V 30V 7A 42 @ VGS=4.5V 57 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
D
G
G D S S
STT SERIES SOT-223
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 30 ±12 TA=25°C TA=70°C 7 5.6 28 9 TA=25°C TA=70°C 3 1.9 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Aug,23,2011
1
www.samhop.com.tw
STT3414
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=24V , VGS=0V
30 1 ±100
V uA nA
VGS= ±12V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=3.5A VGS=4.5V , ID=3.1A VGS=2.5V , ID=2.6A VDS=5V , ID=3.5A
0.5
0.9 26 31 42 16
1.5 33 42 ...