Green Product
STT10L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect T...
Green Product
STT10L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
ID
3A
R DS(ON) (m Ω) Max
140 @ VGS=10V 225 @ VGS=4.5V
D
G G S
STT SERIES SO T - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 100 ±20 TA=25°C TA=70°C 3.0 2.4 20 16 TA=25°C TA=70°C 3 1.9 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Aug,05,2010
1
www.samhop.com.tw
STT10L01
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=3A VGS=4.5V , ID=2.4A VDS=5V , ID=3A
1
1.5 112 167 4 455 48 32 10.5 11 20 6.8 8 4.5 1.2 2.6
...