STT03N20

Green Product STT03N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 0.7A R DS(ON) ( Ω) Max 2.43 @ VGS=10V 2.66 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c a c Limit 200 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 0.7 0.56 4.7 a Units V V A A A W W °C Maximum Power Dissipation 3 1.9 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Apr,18,2014 1 www.samhop.com.tw STT03N20 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min 200 1 ±100 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=160V , VGS=0V V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=0.35A VGS=4.5V , ID=0.33A VDS=10V , ID=0.35A 1 1.7 1.94 1.97 1.3 265 20 12 3 2.43 2.66 V ohm ohm S pF pF pF DYNAMIC CHARACTE...