Green Product
STT04N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect T...
Green Product
STT04N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
200V
ID
1A
R DS(ON) ( Ω) Max
1.8 @ VGS=10V 2.0 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
G G S
STT SERIES SOT - 223
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 200 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 1 0.8 6.6
a
Units V V A A A W W °C
Maximum Power Dissipation
3 1.9 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Nov,01,2012
1
www.samhop.com.tw
STT04N20
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=160V , VGS=0V
200 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=0.5A VGS=4.5V , ID=0.5A VDS=10V , ID=0.5A
1
1.8 1.4 1.6 7.5 385 21 12
2.5 1.8 2.0
V ohm ohm S pF pF pF
DYNAMIC CHARACTERISTICS Inpu...