STT04N20

Green Product STT04N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 200V ID 1A R DS(ON) ( Ω) Max 1.8 @ VGS=10V 2.0 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D G G S STT SERIES SOT - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 200 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 1 0.8 6.6 a Units V V A A A W W °C Maximum Power Dissipation 3 1.9 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 42 °C/W Details are subject to change without notice. Nov,01,2012 1 www.samhop.com.tw STT04N20 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=160V , VGS=0V 200 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.5A VGS=4.5V , ID=0.5A VDS=10V , ID=0.5A 1 1.8 1.4 1.6 7.5 385 21 12 2.5 1.8 2.0 V ohm ohm S pF pF pF DYNAMIC CHARACTERISTICS Inpu...