STK600

Gre r Pro STK600 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 0.8A R DS(ON) ( Ω) Max 0.9 @ VGS=10V 1.3 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TA=25°C TA=70°C 0.80 0.65 4.4 0.56 TA=25°C TA=70°C 1.25 0.8 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 100 °C/W Details are subject to change without notice. Mar,29,2011 1 www.samhop.com.tw STK600 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 1 ±10 V uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.40A VGS=4.5V , ID=0.34A VDS=10V , ID=0.40A 1 1.9 0.70 0.95 0.9 43 17 8.8 3 0.90 1.3 V ohm ohm S pF pF...