STS6N20

Gr Pr STS6N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 0.8A R DS(ON) ( Ω) Max 1.05 @ VGS=10V 1.30 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D S OT 23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 0.8 0.64 3 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Jun,26,2012 1 www.samhop.com.tw STS6N20 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±10 uA uA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.4A VGS=4.5V , ID=0.36A VDS=10V , ID=0.4A 1 1.9 0.85 1.05 1.2 41 17 9 3 1.05 1.30 V ohm ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance ...