STS126

Gre r Pro STS126 Ver 2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 1.4A R DS(ON) (m Ω) Max 312 @ VGS=10V S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 100 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 1.4 1.1 5.3 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. May,31,2012 1 www.samhop.com.tw STS126 Ver 2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±100 uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=0.7A VDS=5V , ID=0.7A 1.0 1.6 250 1.8 275 27 20 2.5 312 V m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse ...