Green Product
STS2302A
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PR...
Green Product
STS2302A
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
20V
ID
4A
R DS(ON) (m Ω) Max
44 @ VGS= 4.5V 65 @ VGS= 2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
D
S OT 23-3L
D S G
G
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TC=25°C TC=70°C TC=25°C TC=70°C
Limit 20 ±10 4 3.2 15.3 1.25 0.8 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to change without notice.
Dec,31,2010
1
www.samhop.com.tw
STS2302A
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=16V , VGS=0V
Min 20
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±10V , VDS=0V
1 ±100
uA nA
VDS=VGS , ID=250uA VGS=4.5V , ID=4A VGS=2.5V , ID=3.5A VDS=5V , ID=4A
0.5
0.8 35 50 10.5
1.5 44 65
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitan...