ST2SC401

ST 2SC401 NPN Silicon Epitaxial Planar Transistor for low saturation switching and voltage regulator applications. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 80 60 5 1 625 150 - 55 to + 150 Unit V V V A mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 100 mA at VCE = 2 V, IC = 1 A Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter on Voltage at VCE = 2 V, IC = 500 mA Gain Bandwidth Product at VCB = 10 V, IC = 50 mA Output Capacitance at VCB = 10 V, f = 1 MHz Symbol hFE hFE ICBO IEBO V(BR)CEO VCE(sat) VBE(on) fT Cob Min. 200 80 60 - Typ. 160 10 Max. 400 100 100 0.4 1.2 - Unit nA nA V V V MHz pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ®  Dated：29/02/2012 Rev：01 ST 2SC401 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ®  Dated：29/02/2012 Rev：01 ...