Document
ST 2SC401
NPN Silicon Epitaxial Planar Transistor
for low saturation switching and voltage regulator applications.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC Ptot Tj Tstg
Value 80 60 5 1 625 150 - 55 to + 150
Unit V V V A mW
O
C C
O
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 2 V, IC = 100 mA at VCE = 2 V, IC = 1 A Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Emitter Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter on Voltage at VCE = 2 V, IC = 500 mA Gain Bandwidth Product at VCB = 10 V, IC = 50 mA Output Capacitance at VCB = 10 V, f = 1 MHz
Symbol hFE hFE ICBO IEBO V(BR)CEO VCE(sat) VBE(on) fT Cob
Min. 200 80 60 -
Typ. 160 10
Max. 400 100 100 0.4 1.2 -
Unit nA nA V V V MHz pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:29/02/2012 Rev:01
ST 2SC401
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated:29/02/2012 Rev:01
.