SI2302
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
R...
