STC3116E

Gre r Pro STC3116E Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 94 @ VGS=10V 30V 2A 107 @ VGS=4.5V 139 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT -323 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 30 ±12 2 1.6 8 1 0.64 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 125 °C/W Details are subject to change without notice. Jun,14,2012 1 www.samhop.com.tw STC3116E Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±12V , VDS=0V 1 ±10 uA uA VDS=VGS , ID=250uA VGS=10V , ID=1.0A VGS=4.5V , ID=0.9A VGS=2.5V , ID=0.8A VDS=5V , ID=1.0A 0.5 0.9 75 82 103 6.5 1.5 94 107 139 V m ohm m ohm m ohm S DYNAMIC CHARACTE...