STP60L60

STB/P60L60 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 36 29 106 113 TC=25°C TC=70°C 70 45 -55 to 150 Units V V A A A mJ W W °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.75 62.5 °C/W °C/W Details are subject to change without notice. Sep,17,2008 1 www.samhop.com.tw Downloaded from Elcodis.com electronic components distributor STB/P60L60 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS DYNAMIC CISS COSS CRSS Drain-Source On-State...