STP80L60

Green Product STB/P80L60 Ver2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 80 68 250 420 TC=25°C TC=70°C 130 91 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 1.15 62.5 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Sep,17,2010 1 www.samhop.com.tw Downloaded from Elcodis.com electronic components distributor STB/P80L60 Ver2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V 60 VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) R...