Green Product
STB/P70L60
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect...
Green Product
STB/P70L60
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
60V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
ID
70A
R DS(ON) (m Ω) Typ
12 @ VGS=10V 18 @ VGS=4.5V
D
D
G D S
G
S
G
S TP S E R IE S TO-220
S TB S E R IE S TO-263(DD-P AK)
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TC=25°C TC=70°C 70 58.6 206 272 TC=25°C TC=70°C 125 87.5 -55 to 175
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case
a a
1.2 62.5
°C/W °C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Sep,10,2010
1
www.samhop.com.tw
Downloaded from Elcodis.com electronic components distributor
STB/P70L60
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V
60
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th)...
