STP35N10

Green Product STP35N10 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 35A R DS(ON) (m Ω) Typ 30 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S G S TP S E R IE S TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a a Limit 100 ±20 T C =25 °C T C =70 °C TC=25°C TC=70°C 35 29.3 103 75 52.5 -55 to 175 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 62.5 °C/W °C/W Details are subject to change without notice. Apr,22,2014 1 www.samhop.com.tw STP35N10 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) gFS Forward Transconductance DYNAMIC CISS COSS CRSS CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfe...