STP45L01F

Green Product STP45L01F Ver1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 40A R DS(ON) (m Ω) Typ 20 @ VGS=10V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 100 ±20 T C =25 °C T C =70 °C 40 32 118 560 a Units V V A A A mJ W W °C Maximum Power Dissipation TC=25°C TC=70°C 62.5 40 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 2 50 °C/W °C/W Details are subject to change without notice. Jun,03,2010 1 www.samhop.com.tw STP45L01F Ver1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=20A VDS=10V , ID=20A 2 2.9 20 24 3200 241 176 4 25 V m ohm S pF pF pF DYNA...