STS8235

STS8235 S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 4.5A R DS(ON) (m Ω) Max 36 @ VGS=4.5V 46 @ VGS=2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. S OT26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 ±10 TA=25°C TA=70°C TA=25°C TA=70°C 4.5 3.6 18 a Units V V A A A A W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Aug,14,2008 1 www.samhop.com.tw STS8235 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance VGS= ±10V , VDS=0V 1 ±10 0.5 0.7 30 36 15 440 80 56 10 12.5 15.5 30 6.7 4.6 1.5 2.2 1.25 0.78 1.2 1.5 36 46 uA uA V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC A ...