STS3621

S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 3A R DS (ON) ( m Ω ) Max ID -2A R DS (ON) ( m Ω ) Max 50 @ V G S = 10V 65 @ V G S = 4.5V D1 90 @ V G S = -10V 135 @ V G S = -4.5V D2 S OT 26 Top View G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 S1 N-ch G2 S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID N-C hannel P-C hannel 30 20 3 2.7 12 1.25 1.25 0.8 -55 to 150 -30 20 -2 1.8 -8 -1.25 Unit V V A A A A W Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 100 C /W S T S 3621 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 3A V GS = 4.5V, ID = 2A V DS = 5V, V GS = 4.5V V DS = 5V, ID =3A Min Typ C Max Unit 30 1 100 1 1.7 40 52 10 9 330 70 45 3 50 65 V uA nA V m-ohm m-ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero...