STS3426

Green Product STS3426 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 31 @ VGS= 10V 30V 4.2A 40 @ VGS= 4.5V 52 @ VGS= 2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. SOT 26 Top View D D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4.2 3.4 17 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Dec,17,2013 1 www.samhop.com.tw STS3426 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±12V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=2.4A VGS=4.5V , ID=2.1A VGS=2.5V , ID=1.9A VDS=5V , ID=2.1A 0.5 0.8 25 30 38 14 1.5 31 40 52 V m ohm m ohm m...