STS8212

Gre r Pro STS8212 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.5 @ VGS=4.5V 15 @ VGS=4.0V 20V 8A 15.5 @ VGS=3.7V 18 @ VGS=3.1V 22 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 8 6.4 50 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Mar,09,2012 1 www.samhop.com.tw STS8212 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS= ±12V , VDS=0V 1 ±10 ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=1mA VGS=4.5V , ID=4A VGS=4.0V , ID=4A VGS=3.7V , ID=4A VGS=3.1V , ID=4A VGS=2.5V , ID=4A 0.5 10.5 11 12 13 14.5 1 12.5 13 13.5 15 18...