STU330S

STU/D330S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 20A R DS(ON) (m Ω) Max 28 @ VGS=10V 38 @ VGS=4.5V G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 30 ±20 TC=25°C TC=70°C 20 16.3 80 8.8 TC=25°C TC=70°C 21 13.3 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a 6 50 °C/W °C/W Details are subject to change without notice. Sep,03,2008 1 www.samhop.com.tw Downloaded from Elcodis.com electronic components distributor STU/D330S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c 30 1 ±100 VG...