STD320S

STU/D320S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 30A R DS(ON) (m Ω) Max 20 @ VGS=10V 29 @ VGS=4.5V ESD Protected. D D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 30 ±20 30 24 120 15 e Units V V A A A mJ W W °C TC=25 °C TC=70 °C Maximum Power Dissipation a TC=25 °C TC=70 °C 32 20 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a 4 50 °C/W °C/W Aug,11,2008 1 www.samhop.com.tw STU/D320S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±10 3 20 29 A uA VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=12.5A VDS=10V , ID=15A 1...