Document
S T U/D428S
S amHop Microelectronics C orp.
Mar.8,2007
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
50A
R DS (ON) ( m Ω ı ) T yp
8 @ V G S = 10V 10 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D
D G S
G D
G
S
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TC=25 C a -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 50 100 20 50 -55 to 175 Unit V V A A A W C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
1
S T U/D428S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
b
Condition
V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A
Min Typ C Max Unit
40 1 10 1 1.7 8 10 30 26 1505 220 150 0.3 23 19 85 27 28 12.5 3 6 3 10 13 V uA uA V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance V DS =20V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =10A,V GS =10V V DS =15V, ID =10A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 10A V GS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
S T U/D428S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
V GS = 0V, Is = 10A
Min Typ Max Unit
0.95 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
60 V G S =4V 50 VG S=4.5 V 40 30 20 10
V G S =2.5V VG S =10V
20
T j =125 C
ID , Drain C urrent(A)
I D , Drain C urrent (A)
15 -55 C 10
25 C
V G S =3V
5
0
0 0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
15
F igure 2. Trans fer C haracteris tics
2.0
R DS (ON) , On-R es is tance Normalized
1.8 1.6 1.4 1.2 1.0 0
V G S =10V I D =10A V G S =4.5V I D =6A
12
R DS (on) (m Ω ı )
V G S =4.5V
9 V G S =10V 6 3
1
1
12
24
36
48
60
0
25
50
75
100
125
150
T j( C )
I D , Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T U/D428S
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
30
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
I D =10 A
Is , S ource-drain current (A)
25
10.0 5.0
R DS (on) (m Ω ı )
20 75 C 15 125 C 10 25 C 5 0
75 C 125 C 25 C
1.0
0 2 4 6 8 10
0
0.24
0.48
0.72
0.96
1.2
V G S , G ate- S ource Voltage (V )
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T U/D428S
2400
V G S , G ate to S ource V oltage (V )
10 8 6 4 2 0 V DS =15V I D =10A
2000
C , C apacitance (pF )
1600 1200 800 400 C rs s 0 0 5 10 15
C is s
6
C os s
20
25
30
0
5
10
15
20
25
30
35 40
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
220
S witching T ime (ns )
) T D(off) Tr
600 100
N) (O
S
100 60 10
L im
T D(on)
Tf
I D , Drain C urrent (A)
1m 10
it
s
10
DC
10
RD
0m
ms
s
1s
1 1
V DS =15V ,ID=1A V G S =10V
1 0.5 0.1
V G S =10V S ingle P ulse T c=25 C
6 10
60 100 300 600
1
10
30 60
R g, G ate R es is tance (ı Ω )
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe O perating Area
5
S T U.