STU600S

Green Product SamHop Microelectronics Corp. STU/D600S Aug 25,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V FEATURES ( m W ) Max ID 16A RDS(ON) Super high dense cell design for low RDS(ON). 55 @ VGS = 10V 70 @ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @Ta -Pulsed b a Symbol VDS VGS 25 C 70 C ID IDM a Limit 60 20 16 10.7 30 15 50 35 -55 to 175 Unit V V A A A A W C Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Ta= 25 C Ta=70 C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D600S N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 48V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 10V, ID =8A Min Typ C Max Unit 60 1 V uA 100 nA 1.0 1.8 45 50 20 16 670 72 45 3.2 13 10 25 9 14.2 7 1.7 3.8 3.0 70 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON ...