STU602S

S amHop Microelectronics C orp. S T U/D602S Aug 26,2006 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 60V F E AT UR E S ( m W ) Max ID 22A R DS (ON) S uper high dense cell design for low R DS (ON ). 30 @ V G S = 10V 38 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a (T A =25 C unles s otherwis e noted) S ymbol V DS V GS Limit 60 20 22 17 60 15 50 35 -55 to 175 W C Unit V V A A A A 25 C 70 C ID IDM IS PD T J , T S TG Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W S T U/D602S N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 48V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 6A V DS = 5V, V GS = 10V V DS = 10V, ID =10A Min Typ C Max Unit 60 1 V uA 100 nA 1.0 1.8 23 27 30 20 1230 125 80 3 21 23 50 12 24.5 12 2.8 6 3.0 30 38 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource...