Green Product
STU12L01
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect T...
Green Product
STU12L01
Ver 1.2
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package.
ID
12A
R DS(ON) (m Ω) Max
140 @ VGS=10V 245 @ VGS=4.5V
G S
STU SERIES TO - 252AA( D - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 100 ±20 TC=25°C TC=70°C 12 9.6 35 25 TC=25°C TC=70°C 50 32 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case
a a
2.5 50
°C/W °C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Oct,04,2010
1
www.samhop.com.tw
STU12L01
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=6A VGS=4.5V , ID=5A VDS=10V , ID=6A
1
1.8 1...