Green Product
STU/D16L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect...
Green Product
STU/D16L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
13A
R DS(ON) (m Ω) Max
98 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package.
118 @ VGS=4.5V
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c
Limit 100 ±20 TC=25°C TC=70°C 13 10.4 38 56 TC=25°C TC=70°C 42 27 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W
Details are subject to change without notice.
Jan,23,2013
1
www.samhop.com.tw
STU/D16L01
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VDS=VGS , ID=250uA VGS=10V , ID=6...
