STU25L01

Gre r Pro STU25L01 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 Package. ID 25A R DS(ON) (m ) Typ 35 @ VGS=10V 45 @ VGS=4.5V G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 100 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 25 21 73 50 35 -55 to 175 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Apr,18,2012 1 www.samhop.com.tw STU25L01 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS= ±20V , VDS=0V 1 ±100 uA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VDS=VGS , ID=250uA VGS=10V , ID=12.5A VGS=4.5V , ID=11A VDS=10V , ID=12.5A 1 2.0 35 45 22 1460 88 75 3 42 55 V m ohm m ohm S pF pF p...