Green Product
STU/D660
Ver 2.0
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Tran...
Green Product
STU/D660
Ver 2.0
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
90V
ID
5A
RDS(ON) (mΩ) Max
724 1014 @VGS=10V @VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected.
D
G S
G D
G
S
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c
Limit 90 ±20 TC=25°C TC=70°C 5 4 14 4 TC=25°C TC=70°C 42 27 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W
Details are subject to change without notice.
Apr,16,2013
1
www.samhop.com.tw
STU/D660
Ver 2.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=72V , VGS=0V
90 1 ±10
V uA uA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VDS=VGS , ID=250uA VGS=10V , ID=2.5A VGS=4.5V , ID=2.2...