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STD45N01 Dataheets PDF



Part Number STD45N01
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet STD45N01 DatasheetSTD45N01 Datasheet (PDF)

Green Product STU45N01 STD45N01 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 40A R DS(ON) (m Ω) Typ 18 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Paramet.

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Green Product STU45N01 STD45N01 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 40A R DS(ON) (m Ω) Typ 18 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 100 ±20 TC=25°C TC=70°C 40 33.5 117 306 TC=25°C TC=70°C 60 42 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 50 °C/W °C/W Details are subject to change without notice. Aug,05,2013 1 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=20A VDS=10V , ID=20A 1 2 18 17 3 23 V m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.0MHz 2560 247 180 pF pF pF VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=20A,VGS=10V VDS=50V,ID=20A, VGS=10V 54 73 78 40 32 4 16 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=6A 0.78 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature. Aug,05,2013 2 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 100 VGS=10V 30 ID, Drain Current(A) VGS=8V 60 VGS=7V 40 VGS=6V 20 VGS=5V 0 ID, Drain Current(A) 80 24 18 12 Tj=125 C -55 C 6 25 C 0 0 0.5 1 1.5 2 2.5 3 0 1.2 2.4 3.6 4.8 6.0 7.2 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 Figure 2. Transfer Characteristics 2.0 RDS(on)(m Ω) 40 30 V G S =10V 20 10 1 1 20 40 60 80 100 R DS(on), On-Resistance Normalized 50 1.8 1.6 1.4 1.2 1.0 0 0 25 V G S =10V I D =20A 50 75 100 125 I D, Drain Current(A) 150 T j ( °C ) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Vth, Normalized Gate-Source Threshold Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 V DS =V G S I D =250uA 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,05,2013 3 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 90 75 60 20 Is, Source-drain current(A) I D =20A 125 C 10 RDS(on)(m Ω) 45 30 75 C 15 0 125 C 25 C 25 C 0 2 4 6 8 10 75 C 1 0 0.25 0.50 0.75 1.00 1.25 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 3600 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) V GS, Gate to Source Voltage(V) 3000 C, Capacitance(pF) Ciss VDS=50V ID=20A 2400 1800 Coss 1200 600 Crss 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Figure 10. Gate Charge 1000 100 R D S( I D, Drain Current(A) Switching Time(ns) ) ON L im it 10 1m s 10 0u us s TD(off ) 10 100 TD(on) Tr 10 m s DC Tf VDS=50V,ID=1A VGS=10V 10 1 10 100 1 0.3 0.1 VGS=10V Single Pulse TC=25 C 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,05,2013 4 www.samhop.com.tw STU45N01 STD45N01 Ver 1.0 V ( BR )D S S tp L V DS RG 20V D .U .T IA S tp + - VDD 0.0 1 IAS Unclamped Inductive Waveforms Figure 13b. Unclamped Inductive Test Circuit Figure 13a. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -.


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