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Green Product
STU45N01 STD45N01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
40A
R DS(ON) (m Ω) Typ
18 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a e
Limit 100 ±20 TC=25°C TC=70°C 40 33.5 117 306 TC=25°C TC=70°C 60 42 -55 to 175
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 50 °C/W °C/W
Details are subject to change without notice.
Aug,05,2013
1
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STU45N01 STD45N01
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=20A VDS=10V , ID=20A
1
2 18 17
3 23
V m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=25V,VGS=0V f=1.0MHz
2560 247 180
pF pF pF
VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=20A,VGS=10V VDS=50V,ID=20A, VGS=10V
54 73 78 40 32 4 16
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=6A
0.78
1.3
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) e.Drain current limited by maximum junction temperature.
Aug,05,2013
2
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STU45N01 STD45N01
Ver 1.0
100 VGS=10V 30
ID, Drain Current(A)
VGS=8V 60 VGS=7V 40 VGS=6V 20 VGS=5V 0
ID, Drain Current(A)
80
24
18
12 Tj=125 C -55 C 6 25 C 0
0
0.5
1
1.5
2
2.5
3
0
1.2
2.4
3.6
4.8
6.0
7.2
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
Figure 2. Transfer Characteristics
2.0
RDS(on)(m Ω)
40 30 V G S =10V 20 10 1 1 20 40 60 80 100
R DS(on), On-Resistance Normalized
50
1.8 1.6 1.4 1.2 1.0 0 0 25
V G S =10V I D =20A
50
75
100
125
I D, Drain Current(A)
150 T j ( °C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.6
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
Vth, Normalized Gate-Source Threshold Voltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50
V DS =V G S I D =250uA
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Aug,05,2013
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STU45N01 STD45N01
Ver 1.0
90 75 60
20
Is, Source-drain current(A)
I D =20A
125 C
10
RDS(on)(m Ω)
45 30 75 C 15 0
125 C
25 C
25 C 0 2 4 6 8 10
75 C
1 0
0.25
0.50
0.75
1.00
1.25
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
3600
Figure 8. Body Diode Forward Voltage Variation with Source Current
10 8 6 4 2 0 0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
V GS, Gate to Source Voltage(V)
3000
C, Capacitance(pF)
Ciss
VDS=50V ID=20A
2400 1800 Coss 1200 600 Crss 0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Figure 10. Gate Charge
1000 100
R
D S(
I D, Drain Current(A)
Switching Time(ns)
) ON
L im
it
10
1m s
10
0u
us
s
TD(off )
10
100
TD(on)
Tr
10
m
s
DC
Tf
VDS=50V,ID=1A VGS=10V
10 1 10 100
1 0.3 0.1
VGS=10V Single Pulse TC=25 C
1 10 100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Aug,05,2013
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STU45N01 STD45N01
Ver 1.0
V ( BR )D S S
tp
L
V DS
RG
20V
D .U .T
IA S
tp
+ -
VDD
0.0 1
IAS
Unclamped Inductive Waveforms Figure 13b.
Unclamped Inductive Test Circuit Figure 13a.
2 1 D=0.5
Normalized Transient Thermal Resistance
0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -.