Green Product
STU/D30N15
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect...
Green Product
STU/D30N15
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
150V
ID
22A
R DS(ON) (m Ω) Typ
62 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
G D
S
STU SERIES TO-252AA (D-PAK)
STD SERIES TO-251 (I-PAK)
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 150 ±20 TC=25°C TC=70°C TC=25°C TC=70°C 22 18.4 64 75 52.5 -55 to 175
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 50 °C/W °C/W
Details are subject to change without notice.
May,30,2014
1
www.samhop.com.tw
STU/D30N15
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=120V , VGS=0V
150 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VDS=VGS , ID=250uA VGS=10V , ID=11A VDS=10V , ID=11A
2
3 62 28
4 72
V m ohm S
DYNAMIC CHARACTE...
