SDU02N25

Gre r Pro SDU/D02N25 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Field Effect Transistor PRODUCT SUMMARY V DSS 250V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 2A R DS(ON) ( Ω) Typ 3.2 @ VGS=10V G S G D S SDU SERIES TO - 252AA(D-PAK) SDD SERIES TO - 251(I-PAK) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 250 ±30 TA=25°C TA=70°C 2 1.5 6 10.4 TA=25°C TA=70°C 42 27 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Jun,07,2012 1 www.samhop.com.tw SDU/D02N25 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=200V , VGS=0V Min 250 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VGS= ±30V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A 2 3 3.2 0.9 4 4.2 V ohm S DYNAMI...