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FDP8N50NZ Dataheets PDF



Part Number FDP8N50NZ
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP8N50NZ DatasheetFDP8N50NZ Datasheet (PDF)

FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET October 2013 FDP8N50NZ / FDPF8N50NZ 500 V, 8 A, 850 m Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant N-Channel UniFETTM II MOSFET Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advance.

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FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET October 2013 FDP8N50NZ / FDPF8N50NZ 500 V, 8 A, 850 m Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant N-Channel UniFETTM II MOSFET Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D GD S G TO-220 G D S TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) - Continuous (TC = 25oC) - Pulsed 8 4.8 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 130 1 300 32 122 8 13 10 40.3 0.3 -55 to +150 - Continuous (TC = 100oC) FDP8N50NZ FDPF8N50NZ 500 ±25 8* 4.8* 32* Unit V V A A mJ A mJ V/ns W W/oC oC oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. 1 FDP8N50NZ FDPF8N50NZ 0.96 62.5 3.1 62.5 Unit oC/W ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Device Marking FDP8N50NZ FDPF8N50NZ Device FDP8N50NZ FDPF8N50NZ Package TO-220 TO-220F Reel Size Tube Tube Tape Width N/A N/A Quantity 50 units 50 units Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to VDS = 400V, TC = 125oC VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V 25oC 500 0.5 1 10 ±10 V V/oC A A On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 4A VDS = 20V, ID = 4A 3.0 0.77 6.3 5.0 0.85 V  S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V,ID = 8A VGS = 10V (Note 4) VDS = 25V, VGS = 0V f = 1MHz - 565 80 5 14 4 6 735 105 8 18 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 8A RG = 25, VGS = 10V (Note 4) - 17 34 43 27 45 80 95 60 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 8A VGS = 0V, ISD = 8A dIF/dt = 100A/s 228 1.43 8 30 1.4 A A V ns C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 8A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 2 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Typical Characteristics Figure 1. On-Region Characteristics 30 10 ID, Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 30 10 ID, Drain Current[A] 150 C o -55 C o 1 1 25 C o 0.1 *Notes: 1. 250s Pulse Test 2. TC = 25 C o 0.03 0.03 0.1 1 VDS, Drain-Source Voltage[V] 10 20 0.1 *Notes: 1. VDS = 20V 2. 250s Pulse Test 2 4 6 8 VGS, Gate-Source Voltage[V] 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100 RDS(ON) [], Drain-Source On-Resis.


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