Document
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
October 2013
FDP8N50NZ / FDPF8N50NZ
500 V, 8 A, 850 m Features
• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant
N-Channel UniFETTM II MOSFET
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Applications
• LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply
D
GD S
G
TO-220
G D S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) - Continuous (TC = 25oC) - Pulsed 8 4.8 (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 130 1 300 32 122 8 13 10 40.3 0.3 -55 to +150 - Continuous (TC = 100oC) FDP8N50NZ FDPF8N50NZ 500 ±25 8* 4.8* 32* Unit V V A A mJ A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
1
FDP8N50NZ FDPF8N50NZ 0.96 62.5 3.1 62.5
Unit
oC/W
©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Device Marking FDP8N50NZ FDPF8N50NZ Device FDP8N50NZ FDPF8N50NZ Package TO-220 TO-220F Reel Size Tube Tube Tape Width N/A N/A Quantity 50 units 50 units
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to VDS = 400V, TC = 125oC VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V 25oC 500 0.5 1 10 ±10 V V/oC A A
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 4A VDS = 20V, ID = 4A 3.0 0.77 6.3 5.0 0.85 V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V,ID = 8A VGS = 10V
(Note 4)
VDS = 25V, VGS = 0V f = 1MHz
-
565 80 5 14 4 6
735 105 8 18 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 8A RG = 25, VGS = 10V
(Note 4)
-
17 34 43 27
45 80 95 60
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 8A VGS = 0V, ISD = 8A dIF/dt = 100A/s 228 1.43 8 30 1.4 A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 8A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2
2
www.fairchildsemi.com
FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics
Figure 1. On-Region Characteristics
30 10
ID, Drain Current[A]
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
30
10
ID, Drain Current[A]
150 C
o
-55 C
o
1
1
25 C
o
0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
0.03 0.03
0.1 1 VDS, Drain-Source Voltage[V]
10
20
0.1
*Notes: 1. VDS = 20V 2. 250s Pulse Test
2
4 6 8 VGS, Gate-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
2.0
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resis.